Laboratoire de Physique Théorique de la Matière Condensée

Séminaires du LPTMC

31.5.2024 - 28.7.2024
  • Séminaire TQM: Nicolas Bergeal (ESPCI)

    Date 20.06.2024 14:00 - 15:00
    Séminaires TQM

    Superconducting oxides interfaces

    The achievement of high-quality epitaxial interfaces involving transition metal oxides offers
    a unique opportunity to design artificial materials that host novel electronic phases. The discovery
    of a high mobility two-dimensional electron gas (2-DEG) confined in a quantum well at the
    interface between two insulating oxides LaAlO3 and SrTiO3 is perhaps one of the most prominent
    examples in the field[1]. Unlike more conventional semiconductor based quantum wells,
    conducting electrons at LaAlO3/SrTiO3 fill 3d-bands, which gives a favourable ground for the
    emergence of complex electronic phases. In particular, 2D superconductivity [2,3] and strong
    Rashba spin orbit coupling [4] have been reported in such interfaces. More recently, the discovery
    of a superconducting 2-DEG in (111)-oriented KTaO3-based heterostructures injected new
    momentum into the realm of oxide interfaces [5,6]. In this system, the superconducting
    Tc can exceed 2K, nearly an order of magnitude higher than that observed in SrTiO3-based
    interfaces. Additionally, the increased mass of Ta compared to Ti leads to significantly enhanced
    spin-orbit effects, as recently demonstrated [7]. Consequently, KTaO3-based 2-DEGs have the
    potential to enable the realization of topological superconducting phases—a concept originally
    proposed for SrTiO3-based 2-DEGs but hitherto unattainable due to the limitations of the relevant
    energy scales.


    A key feature of these electronic systems lies in the possibility to control their carrier density
    by electric field effect, which results in gate-tunability of both superconductivity and Rashba spin-
    orbit coupling. In this talk, I will review complementary dc and microwave transport measurements
    conducted on SrTiO3 and KTaO3-based interfaces employing both back-gate and top-gate
    configurations. I will discuss, in particular, gate-induced multigap superconductivity [8,9] and the
    role of phase fluctuations within the Berezinskii-Kosterlitz-Thouless model [10]. I will also present
    the realization of field effect devices whose physical properties, including superconductivity and
    Rashba spin-orbit coupling, can be tuned over a wide range of electrostatic doping, and discuss the
    potential of oxides interfaces for the realization of mesoscopic devices [11].


    [1] A. Ohtomo and H.Y. Hwang, Nature 427, 423 (2004).
    [2] A. Caviglia et al., Nature 456, 624–627 (2008).
    [3] J. Biscaras et al., Nature Communications 1, 89 (2010).
    [4] A. D. Caviglia et al., Phys. Rev. Lett. 104, 126803 (2010).
    [5] C. Liu, et al. Science 371, 716–721(2021).
    [6] Chen, Z. et al. Science 372, 721–724 (2021).
    [7] Vicente-Arche, L. M. et al. Adv. Mater. 2102102 (2021).
    [7] S. Varotto, et al. Nature Commun. 13, 6165 (2022).
    [8] G. Singh et al., Nature Mat. 18, 948–954 (2019).
    [9] G. Singh et al., Phys. Rev. B 105, 064512 (2022).
    [10] Mallik et al. Nature Commun. 13, 4625 (2022).
    [11] A.Jouan et al. Nature Elec. 3, 201–206 (2020).